pnp 2N5322 ? 2n5323 comset semiconductors 1/3 s s i i l l i i c c o o n n p p l l a a n n a a r r e e p p i i t t a a x x i i a a l l t t r r a a n n s s i i s s t t o o r r s s the 2N5322 and 2n5323 are pnp transistors mounted in to-39 metal case . they are especially intended for high-voltage m edium power applications in industrial and commercial equipements. compliance to rohs absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage (i b = 0) 2N5322 -75 v 2n5323 -50 v cbo collector-base voltage (i e = 0) 2N5322 -100 v 2n5323 -75 v cev collector-emitter voltage (v be = 1.5v) 2N5322 -100 v 2n5323 -75 v ebo emitter-base voltage (i c = 0) 2N5322 -6 v 2n5323 -5 i c collector current 2N5322 -2 a 2n5323 i b base current 2N5322 -1 a 2n5323 p d total power dissipation @ t amb = 25 2N5322 1 w 2n5323 @ t case = 25 2N5322 10 2n5323 t j junction temperature 2N5322 -65 to +200 c 2n5323 t stg storage temperature range 2N5322 -65 to +200 c 2n5323 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to ambient 175 c/w r thj-c thermal resistance, junction to case 17.5 c/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
pnp 2N5322 ? 2n5323 17/10/2012 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb = -80 v, i e =0 2N5322 - - -0.5 a v cb = -60 v, i e =0 2n5323 - - -5 i ebo emitter cutoff current v eb = -5 v, i c =0 2N5322 - -0.1 - a v eb = -4 v, i c =0 2n5323 - -0.5 - v ceo collector emitter breakdown voltage i c = -10 ma, i b =0 2N5322 -75 - - v 2n5323 -50 - - v cev collector emitter breakdown voltage i c = -100 a v be = 1.5v 2N5322 -100 - - v 2n5323 -75 - - v ebo emitter base breakdown voltage i e = -100 a i c =0 2N5322 -6 - - v 2n5323 -5 - - h fe (1) dc current gain i c = -500 ma v ce = -4 v 2N5322 30 - 130 - 2n5323 40 - 250 i c = -1 a v ce = -2 v 2N5322 10 - - v ce(sat) (1) collector-emitter saturation voltage i c = -500 ma i b = -50 ma 2N5322 - - -0.7 v 2n5323 - - -1.2 v be (1) base-emitter voltage i c = -500 ma v ce = -4 v 2N5322 - - -1.1 v 2n5323 - - -1.4 f t transition frequency i c = -50 ma v ce = -4 v f = 10 mhz 2N5322 50 - - mhz 2n5323 t on turn-on time i c = -500 ma v cc = -30 v i b1 = -50 ma 2N5322 - - 100 ns 2n5323 t off turn-off time i c = 500 ma v cc = 30 v i b1 = -i b2 = -50 ma 2N5322 - - 1000 ns 2n5323 (1) pulse conditions : tp < 300 s, =1% www.datasheet.net/ datasheet pdf - http://www..co.kr/
pnp 2N5322 ? 2n5323 17/10/2012 comset semiconductors 3/3 mechanical data case to-39 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : emitter pin 2 : base pin 3 : collector case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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